Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.31$ | 2.50$ |
5 - 9 | 2.19$ | 2.37$ |
10 - 24 | 2.12$ | 2.29$ |
25 - 49 | 2.08$ | 2.25$ |
50 - 65 | 1.88$ | 2.03$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.31$ | 2.50$ |
5 - 9 | 2.19$ | 2.37$ |
10 - 24 | 2.12$ | 2.29$ |
25 - 49 | 2.08$ | 2.25$ |
50 - 65 | 1.88$ | 2.03$ |
NPN-Transistor, 1A, TO-126F, TO-126F (2-8A1H), 120V - 2SA1358Y. NPN-Transistor, 1A, TO-126F, TO-126F (2-8A1H), 120V. Collector current: 1A. Housing: TO-126F. Housing (according to data sheet): TO-126F (2-8A1H). Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Number of terminals: 3. Pd (Power Dissipation, Max): 10W. Spec info: complementary transistor (pair) 2SC3421Y. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: PNP. Operating temperature: -...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. Original product from manufacturer Toshiba. Quantity in stock updated on 15/06/2025, 17:25.
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