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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 0.8A, TO-92, TO-92M ( 9mm ), 120V - 2SA965

NPN-Transistor, 0.8A, TO-92, TO-92M ( 9mm ), 120V - 2SA965
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 3.07$ 3.32$
5 - 9 2.91$ 3.15$
10 - 23 2.82$ 3.05$
Quantity U.P
1 - 4 3.07$ 3.32$
5 - 9 2.91$ 3.15$
10 - 23 2.82$ 3.05$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 23
Set of 1

NPN-Transistor, 0.8A, TO-92, TO-92M ( 9mm ), 120V - 2SA965. NPN-Transistor, 0.8A, TO-92, TO-92M ( 9mm ), 120V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 120V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: PCT Process. Max hFE gain: 240. Minimum hFE gain: 80. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. Spec info: complementary transistor (pair) 2SC2235-Y. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type'. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 1V. Vebo: 5V. Original product from manufacturer Toshiba. Quantity in stock updated on 01/08/2025, 10:25.

Technical documentation

Equivalent products :

Quantity in stock : 4346
2SA1013

2SA1013

NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 160V. Collector current: 1A. Housing: TO-92. Housing (acc...
2SA1013
NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 160V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 160V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Minimum hFE gain: 60. Marking on the case: A1013. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Spec info: complementary transistor (pair) 2SC2383. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 1.5V. Vebo: 6V
2SA1013
NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 160V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 160V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Minimum hFE gain: 60. Marking on the case: A1013. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Spec info: complementary transistor (pair) 2SC2383. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 1.5V. Vebo: 6V
Set of 1
0.55$ VAT incl.
(0.51$ excl. VAT)
0.55$

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2SA965

2SA965

NPN-Transistor, 0.8A, TO-92, TO-92M ( 9mm ), 120V. Collector current: 0.8A. Housing: TO-92. Housing ...
2SA965
[LONGDESCRIPTION]
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