NPN-Transistor 2SB1204, 8A, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 50V

NPN-Transistor 2SB1204, 8A, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 50V

Quantity
Unit price
1-4
5.61$
5-9
5.12$
10-24
4.73$
25+
4.41$
Obsolete product, soon to be removed from the catalog
Out of stock

NPN-Transistor 2SB1204, 8A, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 50V. Collector current: 8A. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Collector/emitter voltage Vceo: 50V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 95pF. FT: 130 MHz. Function: High-Current switching, low-sat. Id(imp): 12A. Maximum saturation voltage VCE(sat): 0.4V. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Quantity per case: 1. Saturation voltage VCE(sat): 0.2V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SD1804. Tf (type): 20 ns. Type of transistor: PNP. Vcbo: 60V. Original product from manufacturer: Sanyo. Quantity in stock updated on 31/10/2025, 07:35

Technical documentation (PDF)
2SB1204
22 parameters
Collector current
8A
Housing
TO-251 ( I-Pak )
Housing (according to data sheet)
TO-251 ( I-Pak )
Collector/emitter voltage Vceo
50V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Cost)
95pF
FT
130 MHz
Function
High-Current switching, low-sat
Id(imp)
12A
Maximum saturation voltage VCE(sat)
0.4V
Number of terminals
3
Pd (Power Dissipation, Max)
20W
Quantity per case
1
Saturation voltage VCE(sat)
0.2V
Semiconductor material
silicon
Spec info
complementary transistor (pair) 2SD1804
Tf (type)
20 ns
Type of transistor
PNP
Vcbo
60V
Original product from manufacturer
Sanyo