NPN transistor, 0.5A, 200V - 2SC1962

NPN transistor, 0.5A, 250V. Collector current: 0.5A. Collector/emitter voltage Vceo: 250V. Quantity per case: 1. Semiconductor material: silicon. FT: 45 MHz. Function: VID-L. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN

NPN transistor, PCB soldering, SOT-32, 500mA. Housing: PCB soldering. Housing: SOT-32. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-126. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE340. Collector-emitter voltage Uceo [V]: 300V. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.5A, TO-126F, TO-225, 300V. Collector current: 0.5A. Housing: TO-126F. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 300V. BE diode: no. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Max hFE gain: 240. Minimum hFE gain: 30. Note: plastic housing. Number of terminals: 3. Pd (Power Dissipation, Max): 20.8W. RoHS: yes. Spec info: complementary transistor (pair) MJE350. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 300V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 3V

NPN transistor, 0.5A, 300V. Collector current: 0.5A. Collector/emitter voltage Vceo: 300V. Quantity per case: 1. Semiconductor material: silicon. FT: 45 MHz. Function: VID-L. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN