Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.50$ | 1.62$ |
5 - 9 | 1.42$ | 1.54$ |
10 - 24 | 1.38$ | 1.49$ |
25 - 49 | 1.35$ | 1.46$ |
50 - 99 | 1.32$ | 1.43$ |
100 - 249 | 1.27$ | 1.37$ |
250+ | 1.23$ | 1.33$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.50$ | 1.62$ |
5 - 9 | 1.42$ | 1.54$ |
10 - 24 | 1.38$ | 1.49$ |
25 - 49 | 1.35$ | 1.46$ |
50 - 99 | 1.32$ | 1.43$ |
100 - 249 | 1.27$ | 1.37$ |
250+ | 1.23$ | 1.33$ |
NPN transistor, 1.5A, TO-92, TO-92M ( 9mm ), 30 v - 2SC2236. NPN transistor, 1.5A, TO-92, TO-92M ( 9mm ), 30 v. Collector current: 1.5A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 120MHz. Max hFE gain: 320. Minimum hFE gain: 100. Pd (Power Dissipation, Max): 900mW. Spec info: complementary transistor (pair) 2SA966. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. Original product from manufacturer Toshiba. Quantity in stock updated on 01/08/2025, 10:25.
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