| Quantity in stock: 78 |
NPN transistor 2SC2240BL, 0.1A, TO-92, TO-92, 120V
Quantity
Unit price
1-4
2.76$
5-24
2.55$
25-49
2.41$
50-99
2.27$
100+
2.02$
| Equivalence available | |
| Quantity in stock: -10 |
NPN transistor 2SC2240BL, 0.1A, TO-92, TO-92, 120V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 120V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 3pF. FT: 100 MHz. Function: Low noise, Audio amplifier. Marking on the case: C2240BL. Max hFE gain: 700. Minimum hFE gain: 350. Number of terminals: 3. Operating temperature: -55...+125°C. Pd (Power Dissipation, Max): 0.3W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.3V. Semiconductor material: silicon. Spec info: complementary transistor (pair) 2SA970BL. Technology: 'Epitaxial Type (PCT Process)'. Temperature: +125°C. Type of transistor: NPN. Vcbo: 120V. Vebo: 5V. Original product from manufacturer: Toshiba. Quantity in stock updated on 13/11/2025, 05:13
2SC2240BL
27 parameters
Collector current
0.1A
Housing
TO-92
Housing (according to data sheet)
TO-92
Collector/emitter voltage Vceo
120V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Cost)
3pF
FT
100 MHz
Function
Low noise, Audio amplifier
Marking on the case
C2240BL
Max hFE gain
700
Minimum hFE gain
350
Number of terminals
3
Operating temperature
-55...+125°C
Pd (Power Dissipation, Max)
0.3W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.3V
Semiconductor material
silicon
Spec info
complementary transistor (pair) 2SA970BL
Technology
'Epitaxial Type (PCT Process)'
Temperature
+125°C
Type of transistor
NPN
Vcbo
120V
Vebo
5V
Original product from manufacturer
Toshiba