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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 5A, TO-220, 60V - 2SC2562

NPN transistor, 5A, TO-220, 60V - 2SC2562
Quantity excl. VAT VAT incl.
1 - 4 3.96$ 4.28$
5 - 9 3.76$ 4.06$
10 - 24 3.64$ 3.93$
25 - 49 3.57$ 3.86$
50 - 99 3.49$ 3.77$
100 - 249 3.37$ 3.64$
250+ 3.25$ 3.51$
Quantity U.P
1 - 4 3.96$ 4.28$
5 - 9 3.76$ 4.06$
10 - 24 3.64$ 3.93$
25 - 49 3.57$ 3.86$
50 - 99 3.49$ 3.77$
100 - 249 3.37$ 3.64$
250+ 3.25$ 3.51$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

NPN transistor, 5A, TO-220, 60V - 2SC2562. NPN transistor, 5A, TO-220, 60V. Collector current: 5A. Housing: TO-220. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 120MHz. Marking on the case: C2562. Pd (Power Dissipation, Max): 25W. RoHS: no. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Maximum saturation voltage VCE(sat): 0.4V. Original product from manufacturer Toshiba. Quantity in stock updated on 16/06/2025, 13:25.

Equivalent products :

Quantity in stock : 16
2SD1062

2SD1062

NPN transistor, 12A, TO-220, TO-220AB, 50V. Collector current: 12A. Housing: TO-220. Housing (accord...
2SD1062
NPN transistor, 12A, TO-220, TO-220AB, 50V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: high-speed inverters, converters, low-sat. Max hFE gain: 280. Minimum hFE gain: 70. Ic(pulse): 15A. Marking on the case: D1062. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. Spec info: complementary transistor (pair) 2SB826. Assembly/installation: PCB through-hole mounting. Tf(max): 1.2us. Tf(min): 0.4us. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Vebo: 6V
2SD1062
NPN transistor, 12A, TO-220, TO-220AB, 50V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: high-speed inverters, converters, low-sat. Max hFE gain: 280. Minimum hFE gain: 70. Ic(pulse): 15A. Marking on the case: D1062. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. Spec info: complementary transistor (pair) 2SB826. Assembly/installation: PCB through-hole mounting. Tf(max): 1.2us. Tf(min): 0.4us. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Vebo: 6V
Set of 1
1.95$ VAT incl.
(1.80$ excl. VAT)
1.95$

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2SC3264

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BOX-M150-100-60

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