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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V - 2SC5129

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V - 2SC5129
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Quantity excl. VAT VAT incl.
1 - 4 3.60$ 3.89$
5 - 9 3.42$ 3.70$
10 - 24 3.31$ 3.58$
25 - 49 3.24$ 3.50$
50 - 99 3.17$ 3.43$
100 - 106 3.06$ 3.31$
Quantity U.P
1 - 4 3.60$ 3.89$
5 - 9 3.42$ 3.70$
10 - 24 3.31$ 3.58$
25 - 49 3.24$ 3.50$
50 - 99 3.17$ 3.43$
100 - 106 3.06$ 3.31$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 106
Set of 1

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V - 2SC5129. NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1.7 MHz. Function: MONITOR HA,Hi-res. Max hFE gain: 30. Minimum hFE gain: 10. Ic(pulse): 20A. Marking on the case: C5129. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: fall time 0.15..03us (64kHz). Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.3us. Tf(min): 0.15us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Original product from manufacturer Toshiba. Quantity in stock updated on 17/06/2025, 10:25.

Technical documentation

Equivalent products :

Quantity in stock : 18
2SC5129-PMC

2SC5129-PMC

NPN transistor, 10A, 600V. Collector current: 10A. Collector/emitter voltage Vceo: 600V. CE diode: y...
2SC5129-PMC
NPN transistor, 10A, 600V. Collector current: 10A. Collector/emitter voltage Vceo: 600V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Function: HA, Hi-res. Note: MONITOR. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V
2SC5129-PMC
NPN transistor, 10A, 600V. Collector current: 10A. Collector/emitter voltage Vceo: 600V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Function: HA, Hi-res. Note: MONITOR. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V
Set of 1
3.45$ VAT incl.
(3.19$ excl. VAT)
3.45$
Quantity in stock : 44
KSD5703

KSD5703

NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 800V. Collector current: 10A. Housing: TO-3PF...
KSD5703
NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 800V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 15. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Spec info: 0.1...0.3us. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 6V
KSD5703
NPN transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 800V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 15. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Spec info: 0.1...0.3us. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 6V
Set of 1
5.22$ VAT incl.
(4.83$ excl. VAT)
5.22$

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