Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.97$ | 3.21$ |
5 - 9 | 2.82$ | 3.05$ |
10 - 24 | 2.73$ | 2.95$ |
25 - 49 | 2.67$ | 2.89$ |
50 - 99 | 2.61$ | 2.82$ |
100 - 249 | 2.52$ | 2.72$ |
250 - 826 | 2.44$ | 2.64$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.97$ | 3.21$ |
5 - 9 | 2.82$ | 3.05$ |
10 - 24 | 2.73$ | 2.95$ |
25 - 49 | 2.67$ | 2.89$ |
50 - 99 | 2.61$ | 2.82$ |
100 - 249 | 2.52$ | 2.72$ |
250 - 826 | 2.44$ | 2.64$ |
NPN transistor, 8A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V - 2SC5149. NPN transistor, 8A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: fast operation, for horizontal deflection (TV). Max hFE gain: 25. Minimum hFE gain: 8. Ic(pulse): 16A. Marking on the case: C5149. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. Spec info: 'Triple Diffused MESA Type'. Assembly/installation: PCB through-hole mounting. Tf(max): 0.5us. Tf(min): 0.2us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Original product from manufacturer Toshiba. Quantity in stock updated on 17/06/2025, 09:25.
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