Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 8.03$ | 8.68$ |
2 - 2 | 7.63$ | 8.25$ |
3 - 4 | 7.39$ | 7.99$ |
5 - 9 | 7.23$ | 7.82$ |
10 - 19 | 7.07$ | 7.64$ |
20 - 29 | 6.83$ | 7.38$ |
30+ | 6.58$ | 7.11$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 8.03$ | 8.68$ |
2 - 2 | 7.63$ | 8.25$ |
3 - 4 | 7.39$ | 7.99$ |
5 - 9 | 7.23$ | 7.82$ |
10 - 19 | 7.07$ | 7.64$ |
20 - 29 | 6.83$ | 7.38$ |
30+ | 6.58$ | 7.11$ |
NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F2A ), 600V - 2SC5331-TOS. NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F2A ), 600V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F2A ). Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Semiconductor material: silicon. FT: 1.7 MHz. Max hFE gain: 38. Minimum hFE gain: 10. Ic(pulse): 30A. Marking on the case: C5331. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 180W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.3us. Tf(min): 0.12us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Original product from manufacturer Toshiba. Quantity in stock updated on 17/06/2025, 12:25.
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