NPN transistor 2SD1624S, 3A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 50V

NPN transistor 2SD1624S, 3A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 50V

Quantity
Unit price
1-4
1.24$
5-24
0.98$
25-49
0.88$
50+
0.77$
Quantity in stock: 56

NPN transistor 2SD1624S, 3A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 50V. Collector current: 3A. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 50V. Assembly/installation: surface-mounted component (SMD). FT: 150 MHz. Function: High-Current Switching, low-saturation voltage. Ic(pulse): 6A. Marking on the case: DG. Max hFE gain: 280. Minimum hFE gain: 140. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.35V. Semiconductor material: silicon. Spec info: screen printing/SMD code DG. Technology: 'Epitaxial Planar Silicon Transistors'. Temperature: +150°C. Tf(max): 35 ns. Tf(min): 35 ns. Type of transistor: NPN. Vcbo: 60V. Vebo: 6V. Original product from manufacturer: Sanyo. Quantity in stock updated on 31/10/2025, 07:46

Technical documentation (PDF)
2SD1624S
26 parameters
Collector current
3A
Housing
SOT-89 4-Pin ( 3+Tab )
Housing (according to data sheet)
SOT-89
Collector/emitter voltage Vceo
50V
Assembly/installation
surface-mounted component (SMD)
FT
150 MHz
Function
High-Current Switching, low-saturation voltage
Ic(pulse)
6A
Marking on the case
DG
Max hFE gain
280
Minimum hFE gain
140
Number of terminals
3
Pd (Power Dissipation, Max)
0.5W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.35V
Semiconductor material
silicon
Spec info
screen printing/SMD code DG
Technology
'Epitaxial Planar Silicon Transistors'
Temperature
+150°C
Tf(max)
35 ns
Tf(min)
35 ns
Type of transistor
NPN
Vcbo
60V
Vebo
6V
Original product from manufacturer
Sanyo