NPN-Transistor BC327-25-AMMO, 0.8A, TO-92, TO-92 ( Ammo Pack ), 50V

NPN-Transistor BC327-25-AMMO, 0.8A, TO-92, TO-92 ( Ammo Pack ), 50V

Quantity
Unit price
10-49
0.0565$
50-99
0.0501$
100-199
0.0441$
200+
0.0357$
Equivalence available
Quantity in stock: 3360
Minimum: 10

NPN-Transistor BC327-25-AMMO, 0.8A, TO-92, TO-92 ( Ammo Pack ), 50V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 50V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Cost): 12pF. FT: 100 MHz. Function: hFE 160-400. Ic(pulse): 1A. Max hFE gain: 400. Minimum hFE gain: 160. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.625W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.7V. Semiconductor material: silicon. Spec info: complementary transistor (pair) BC337-25. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Vcbo: 50V. Vebo: 5V. Original product from manufacturer: Diotec Semiconductor. Minimum quantity: 10. Quantity in stock updated on 31/10/2025, 08:56

Technical documentation (PDF)
BC327-25-AMMO
27 parameters
Collector current
0.8A
Housing
TO-92
Housing (according to data sheet)
TO-92 ( Ammo Pack )
Collector/emitter voltage Vceo
50V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Cost)
12pF
FT
100 MHz
Function
hFE 160-400
Ic(pulse)
1A
Max hFE gain
400
Minimum hFE gain
160
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
0.625W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.7V
Semiconductor material
silicon
Spec info
complementary transistor (pair) BC337-25
Technology
'Epitaxial Planar Transistor'
Type of transistor
PNP
Vcbo
50V
Vebo
5V
Original product from manufacturer
Diotec Semiconductor
Minimum quantity
10

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