NPN transistor BC546B, TO-92, 65V, 100mA, 0.1A, TO-92, 65V

NPN transistor BC546B, TO-92, 65V, 100mA, 0.1A, TO-92, 65V

Quantity
Unit price
10-99
0.0618$
100-199
0.0536$
200-499
0.0471$
500+
0.0376$
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Quantity in stock: 980
Minimum: 10

NPN transistor BC546B, TO-92, 65V, 100mA, 0.1A, TO-92, 65V. Housing: TO-92. Collector-Emitter Voltage VCEO: 65V. Collector current Ic [A], max.: 100mA. Collector current: 0.1A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 65V. Assembly/installation: PCB through-hole mounting. BE diode: no. Bandwidth MHz: 300MHz. CE diode: no. Collector current Ic [A]: 100mA, 0.1A. Collector-Base Voltage VCBO: 80V. Collector-emitter voltage Uceo [V]: 65V. Component family: NPN transistor. Conditioning: -. Configuration: PCB through-hole mounting. Cost): 6pF. Current Max 1: 0.1A. Cutoff frequency ft [MHz]: 300 MHz. DC Collector/Base Gain hFE min.: 200. FT: 100 MHz. Frequency: 300MHz. Housing (JEDEC standard): TO-226. Ic(pulse): 0.2A. Information: -. MSL: -. Manufacturer's marking: BC546B. Max hFE gain: 450. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.5W. Minimum hFE gain: 200. Mounting Type: PCB through-hole mounting. Number of terminals: 3. Number of terminals: 3. Packaging: -. Pd (Power Dissipation, Max): 0.5W. Polarity: bipolar. Power: 0.5W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.09V. Semiconductor material: silicon. Series: BC. Spec info: complementary transistor (pair) BC556B. Technology: 'Planar Epitaxial transistor'. Temperature: +150°C. Type of transistor: NPN. Type: transistor for low power applications. Vcbo: 80V. Vebo: 6V. Voltage (collector - emitter): 65V. Original product from manufacturer: Cdil. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 20:34

Technical documentation (PDF)
BC546B
49 parameters
Housing
TO-92
Collector-Emitter Voltage VCEO
65V
Collector current Ic [A], max.
100mA
Collector current
0.1A
Housing (according to data sheet)
TO-92
Collector/emitter voltage Vceo
65V
Assembly/installation
PCB through-hole mounting
BE diode
no
Bandwidth MHz
300MHz
CE diode
no
Collector current Ic [A]
100mA, 0.1A
Collector-Base Voltage VCBO
80V
Collector-emitter voltage Uceo [V]
65V
Component family
NPN transistor
Configuration
PCB through-hole mounting
Cost)
6pF
Current Max 1
0.1A
Cutoff frequency ft [MHz]
300 MHz
DC Collector/Base Gain hFE min.
200
FT
100 MHz
Frequency
300MHz
Housing (JEDEC standard)
TO-226
Ic(pulse)
0.2A
Manufacturer's marking
BC546B
Max hFE gain
450
Max temperature
+150°C.
Maximum dissipation Ptot [W]
0.5W
Minimum hFE gain
200
Mounting Type
PCB through-hole mounting
Number of terminals
3
Number of terminals
3
Pd (Power Dissipation, Max)
0.5W
Polarity
bipolar
Power
0.5W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.09V
Semiconductor material
silicon
Series
BC
Spec info
complementary transistor (pair) BC556B
Technology
'Planar Epitaxial transistor'
Temperature
+150°C
Type of transistor
NPN
Type
transistor for low power applications
Vcbo
80V
Vebo
6V
Voltage (collector - emitter)
65V
Original product from manufacturer
Cdil
Minimum quantity
10