NPN transistor BC550C, TO-92, 0.1A, TO-92, 45V

NPN transistor BC550C, TO-92, 0.1A, TO-92, 45V

Quantity
Unit price
10-49
0.0850$
50-99
0.0748$
100-499
0.0664$
500+
0.0544$
Equivalence available
Quantity in stock: 399
Minimum: 10

NPN transistor BC550C, TO-92, 0.1A, TO-92, 45V. Housing: TO-92. Collector current: 0.1A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Collector current Ic [A]: 100mA. FT: 250 MHz. Frequency: 300MHz. Function: hFE 420...800 (IC=2mAdc, VCE=5Vdc). Max hFE gain: 800. Minimum hFE gain: 420. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.625W. Polarity: bipolar. Power: 0.5W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.3V. Semiconductor material: silicon. Spec info: complementary transistor (pair) BC560C. Type of transistor: NPN. Vcbo: 50V. Vebo: 5V. Voltage (collector - emitter): 50V. Original product from manufacturer: Lge Technology. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 20:34

Technical documentation (PDF)
BC550C
29 parameters
Housing
TO-92
Collector current
0.1A
Housing (according to data sheet)
TO-92
Collector/emitter voltage Vceo
45V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Collector current Ic [A]
100mA
FT
250 MHz
Frequency
300MHz
Function
hFE 420...800 (IC=2mAdc, VCE=5Vdc)
Max hFE gain
800
Minimum hFE gain
420
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
0.625W
Polarity
bipolar
Power
0.5W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.3V
Semiconductor material
silicon
Spec info
complementary transistor (pair) BC560C
Type of transistor
NPN
Vcbo
50V
Vebo
5V
Voltage (collector - emitter)
50V
Original product from manufacturer
Lge Technology
Minimum quantity
10

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