| +2500 rapidement | |
| Obsolete | |
| Out of stock | |
| Replacement | |
| Notif | |
| 12 in stock | |
| x2 |
NPN-Transistor BC560CG, TO-92, TO-226AA, 45V, 100mA, 100mA, TO-92, 45V
Quantity
Unit price
10-49
0.0969$
50-99
0.0865$
100+
0.0761$
| +15000 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability! | |
| Equivalence available | |
| Quantity in stock: 473 |
NPN-Transistor BC560CG, TO-92, TO-226AA, 45V, 100mA, 100mA, TO-92, 45V. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Collector current: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Assembly/installation: PCB through-hole mounting. Component family: PNP transistor. Configuration: PCB through-hole mounting. Cutoff frequency ft [MHz]: 250 MHz. FT: 250 MHz. Function: hFE 380...800, (IC=2.0mAdc, VCE=5.0Vdc). Manufacturer's marking: BC560C. Max hFE gain: 800. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.625W. Minimum hFE gain: 100. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 0.625W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.3V. Semiconductor material: silicon. Spec info: complementary transistor (pair) BC550C. Type of transistor: PNP. Vcbo: 50V. Vebo: 5V. Original product from manufacturer: ON Semiconductor. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 20:34
BC560CG
32 parameters
Housing
TO-92
Housing (JEDEC standard)
TO-226AA
Collector-emitter voltage Uceo [V]
45V
Collector current Ic [A], max.
100mA
Collector current
100mA
Housing (according to data sheet)
TO-92
Collector/emitter voltage Vceo
45V
Assembly/installation
PCB through-hole mounting
Component family
PNP transistor
Configuration
PCB through-hole mounting
Cutoff frequency ft [MHz]
250 MHz
FT
250 MHz
Function
hFE 380...800, (IC=2.0mAdc, VCE=5.0Vdc)
Manufacturer's marking
BC560C
Max hFE gain
800
Max temperature
+150°C.
Maximum dissipation Ptot [W]
0.625W
Minimum hFE gain
100
Number of terminals
3
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
0.625W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.3V
Semiconductor material
silicon
Spec info
complementary transistor (pair) BC550C
Type of transistor
PNP
Vcbo
50V
Vebo
5V
Original product from manufacturer
ON Semiconductor
Minimum quantity
10