NPN-Transistor BC857A, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V

NPN-Transistor BC857A, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V

Quantity
Unit price
10-49
0.0556$
50-99
0.0495$
100+
0.0436$
Quantity in stock: 45
Minimum: 10

NPN-Transistor BC857A, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 45V. Assembly/installation: surface-mounted component (SMD). Darlington transistor?: no. FT: 100 MHz. Function: general purpose. Ic(pulse): 200mA. Marking on the case: 3E. Max hFE gain: 250. Minimum hFE gain: 125. Number of terminals: 3. Operating temperature: °C. Pd (Power Dissipation, Max): 0.25W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.075V. Semiconductor material: silicon. Spec info: SMD 3E. Type of transistor: PNP. Vcbo: 50V. Vebo: 5V. Original product from manufacturer: Nxp Semiconductors. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 20:34

Technical documentation (PDF)
BC857A
25 parameters
Collector current
100mA
Housing
SOT-23 ( TO-236 )
Housing (according to data sheet)
SOT-23 ( TO236 )
Collector/emitter voltage Vceo
45V
Assembly/installation
surface-mounted component (SMD)
Darlington transistor?
no
FT
100 MHz
Function
general purpose
Ic(pulse)
200mA
Marking on the case
3E
Max hFE gain
250
Minimum hFE gain
125
Number of terminals
3
Operating temperature
°C
Pd (Power Dissipation, Max)
0.25W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.075V
Semiconductor material
silicon
Spec info
SMD 3E
Type of transistor
PNP
Vcbo
50V
Vebo
5V
Original product from manufacturer
Nxp Semiconductors
Minimum quantity
10