NPN-Transistor BC857B, SOT-23 ( TO-236 ), TO-236, -45V, 45V, 100mA, 100mA, SOT-23 ( TO236 ), 50V. Housing: SOT-23 ( TO-236 ). Housing (JEDEC standard): TO-236. Collector-Emitter Voltage VCEO: -45V. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Collector current: 100mA. Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. Assembly/installation: surface-mounted component (SMD). BE diode: no. Bandwidth MHz: 100MHz. CE diode: no. Collector current Ic [A]: 100mA. Collector-Base Voltage VCBO: -50V. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Cutoff frequency ft [MHz]: 100 MHz. DC Collector/Base Gain hFE min.: 220. FT: 150 MHz. Function: general purpose. Gain hfe: 290. Ic(pulse): 200mA. Information: -. Manufacturer's marking: 3F. Marking on the case: 3F. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.25W. Mounting Type: SMD. Number of terminals: 3. Number of terminals: 3. Pd (Power Dissipation, Max): 0.33W. Polarity: bipolar. Power: 0.25W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Series: BC. Spec info: SMD KO0 3F. Type of transistor: PNP. Type: transistor for low power applications. Vcbo: 50V. Vebo: 5V. Voltage (collector - emitter): 50V, 45V. Original product from manufacturer: Infineon Technologies. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 20:34