NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V - BC857C

Quantity (Set of 10)	excl. VAT	VAT incl.
1 - 4	0.89$	0.96$
5 - 9	0.85$	0.92$
10 - 24	0.80$	0.86$
25 - 49	0.69$	0.75$
50 - 99	0.65$	0.70$
100 - 149	0.61$	0.66$
150 - 392	0.57$	0.62$

Quantity (Set of 10)	U.P
1 - 4	0.89$	0.96$
5 - 9	0.85$	0.92$
10 - 24	0.80$	0.86$
25 - 49	0.69$	0.75$
50 - 99	0.65$	0.70$
100 - 149	0.61$	0.66$
150 - 392	0.57$	0.62$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 3919

Set of 10

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V - BC857C. NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): 200mA. Marking on the case: 3 G. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.075V. Vebo: 5V. Spec info: screen printing/CMS code 3G. BE diode: no. CE diode: no. Quantity in stock updated on 29/04/2025, 05:25.

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