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1 - 9 | 0.28$ | 0.30$ |
10 - 24 | 0.27$ | 0.29$ |
25 - 49 | 0.25$ | 0.27$ |
50 - 99 | 0.25$ | 0.27$ |
100 - 249 | 0.24$ | 0.26$ |
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500 - 833 | 0.20$ | 0.22$ |
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1 - 9 | 0.28$ | 0.30$ |
10 - 24 | 0.27$ | 0.29$ |
25 - 49 | 0.25$ | 0.27$ |
50 - 99 | 0.25$ | 0.27$ |
100 - 249 | 0.24$ | 0.26$ |
250 - 499 | 0.23$ | 0.25$ |
500 - 833 | 0.20$ | 0.22$ |
NPN transistor, 1A, SOT-223 ( TO-226 ), SOT-223, 60V - BCP55-16. NPN transistor, 1A, SOT-223 ( TO-226 ), SOT-223, 60V. Collector current: 1A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 25pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: Audio, telephony and automotive applications. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 2A. Marking on the case: BCP 5516. Number of terminals: 3. Pd (Power Dissipation, Max): 2W. RoHS: yes. Spec info: complementary transistor (pair) BCP52-16. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 60V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. Original product from manufacturer Diodes Inc.. Quantity in stock updated on 18/06/2025, 23:25.
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