NPN transistor BCR533, 500mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V

NPN transistor BCR533, 500mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V

Quantity
Unit price
10-49
0.0886$
50-99
0.0773$
100-199
0.0690$
200+
0.0586$
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Quantity in stock: 2092
Minimum: 10

NPN transistor BCR533, 500mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 500mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. Assembly/installation: surface-mounted component (SMD). BE diode: no. BE resistor: 10k Ohms. CE diode: no. FT: 100 MHz. Function: Transistor with built-in bias resistor. Marking on the case: XCs. Minimum hFE gain: 70. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 0.33W. Quantity per case: 1. Resistor B: 10k Ohms. RoHS: yes. Saturation voltage VCE(sat): 0.3V. Semiconductor material: silicon. Spec info: screen printing/CMS code XCs. Type of transistor: NPN. Vcbo: 50V. Vebo: 1V. Original product from manufacturer: Infineon Technologies. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 20:34

Technical documentation (PDF)
BCR533
26 parameters
Collector current
500mA
Housing
SOT-23 ( TO-236 )
Housing (according to data sheet)
SOT-23 ( TO236 )
Collector/emitter voltage Vceo
50V
Assembly/installation
surface-mounted component (SMD)
BE diode
no
BE resistor
10k Ohms
CE diode
no
FT
100 MHz
Function
Transistor with built-in bias resistor
Marking on the case
XCs
Minimum hFE gain
70
Number of terminals
3
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
0.33W
Quantity per case
1
Resistor B
10k Ohms
RoHS
yes
Saturation voltage VCE(sat)
0.3V
Semiconductor material
silicon
Spec info
screen printing/CMS code XCs
Type of transistor
NPN
Vcbo
50V
Vebo
1V
Original product from manufacturer
Infineon Technologies
Minimum quantity
10