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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 4A, 80V, TO-126 - BD441

NPN transistor, 4A, 80V, TO-126 - BD441
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.44$ 0.48$
10 - 24 0.42$ 0.45$
25 - 49 0.40$ 0.43$
50 - 99 0.39$ 0.42$
100 - 249 0.37$ 0.40$
250 - 499 0.36$ 0.39$
500 - 626 0.34$ 0.37$
Quantity U.P
1 - 9 0.44$ 0.48$
10 - 24 0.42$ 0.45$
25 - 49 0.40$ 0.43$
50 - 99 0.39$ 0.42$
100 - 249 0.37$ 0.40$
250 - 499 0.36$ 0.39$
500 - 626 0.34$ 0.37$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 626
Set of 1

NPN transistor, 4A, 80V, TO-126 - BD441. NPN transistor, 4A, 80V, TO-126. Collector current: 4A. Collector-Emitter Voltage VCEO: 80V. Housing: TO-126. Type of transistor: NPN power transistor. Polarity: NPN. Power: 36W. Max frequency: 3MHz. Quantity in stock updated on 18/06/2025, 20:25.

Technical documentation

Equivalent products :

Quantity in stock : 387
MJE243G

MJE243G

NPN transistor, 4A, TO-126 (TO-225, SOT-32), TO-225, 100V. Collector current: 4A. Housing: TO-126 (T...
MJE243G
NPN transistor, 4A, TO-126 (TO-225, SOT-32), TO-225, 100V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 100V. RoHS: yes. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. Spec info: complementary transistor (pair) MJE253. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Vebo: 7V. Resistor B: NPN power transistor. BE resistor: 100V. C(in): 4A. Cost): 15W
MJE243G
NPN transistor, 4A, TO-126 (TO-225, SOT-32), TO-225, 100V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 100V. RoHS: yes. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. Spec info: complementary transistor (pair) MJE253. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Vebo: 7V. Resistor B: NPN power transistor. BE resistor: 100V. C(in): 4A. Cost): 15W
Set of 1
1.25$ VAT incl.
(1.16$ excl. VAT)
1.25$

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2SA1943

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TIP42C

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2SD600K

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