Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 9.11$ | 9.85$ |
2 - 2 | 8.65$ | 9.35$ |
3 - 4 | 8.38$ | 9.06$ |
5 - 9 | 8.20$ | 8.86$ |
10 - 19 | 8.02$ | 8.67$ |
20 - 21 | 7.74$ | 8.37$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 9.11$ | 9.85$ |
2 - 2 | 8.65$ | 9.35$ |
3 - 4 | 8.38$ | 9.06$ |
5 - 9 | 8.20$ | 8.86$ |
10 - 19 | 8.02$ | 8.67$ |
20 - 21 | 7.74$ | 8.37$ |
NPN-Transistor, 12A, TO-3P ( TO-218 SOT-93 ), SOT-93, 120V - BDV64C-POW. NPN-Transistor, 12A, TO-3P ( TO-218 SOT-93 ), SOT-93, 120V. Collector current: 12A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Collector/emitter voltage Vceo: 120V. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Minimum hFE gain: 1000. Ic(pulse): 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) BDV65C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 2V. Vebo: 5V. Original product from manufacturer Power Integrations. Quantity in stock updated on 17/06/2025, 00:25.
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