NPN-Transistor BDX54C, TO-220, TO-220AB, 8A, -100V, 100V, 8A, TO-220AB, 50V. Housing: TO-220. Housing (JEDEC standard): TO-220AB. Collector current: 8A. Collector-Emitter Voltage VCEO: -100V. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 8A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 50V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: yes. Collector current Ic [A]: 8A. Collector-Base Voltage VCBO: -100V. Component family: Darlington PNP Power Transistor. Conditioning unit: 50. Conditioning: tubus. Configuration: PCB through-hole mounting. Current Max 1: -8A. Cutoff frequency ft [MHz]: -. DC Collector/Base Gain hFE min.: 750. Darlington transistor?: yes. FT: 20 MHz. Function: audio amplifier. Gain hfe: 750. Ic(pulse): 12A. Information: -. MSL: -. Manufacturer's marking: BDX54C. Max frequency: 20MHz. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 60W. Maximum saturation voltage VCE(sat): 2V. Minimum hFE gain: 750. Mounting Type: PCB through-hole mounting. Note: complementary transistor (pair) BDX53C. Number of terminals: 3. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 60W. Polarity: bipolar. Power: 60W. Production date: 2014/32. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Series: BDX54C. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms. Technology: Complementary power Darlington transistors. Temperature: +150°C. Type of transistor: PNP. Type: Darlington transistor. Vcbo: 100V. Vebo: 5V. Voltage (collector - emitter): 100V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 13/11/2025, 04:24