NPN-Transistor BF421, TO-92, TO-226AA, 300V, 500mA, 50mA, TO-92, 300V

NPN-Transistor BF421, TO-92, TO-226AA, 300V, 500mA, 50mA, TO-92, 300V

Quantity
Unit price
10-49
0.0821$
50-99
0.0679$
100+
0.0587$
Quantity in stock: 20777
Minimum: 10

NPN-Transistor BF421, TO-92, TO-226AA, 300V, 500mA, 50mA, TO-92, 300V. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. Collector current: 50mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 300V. Assembly/installation: PCB through-hole mounting. CE diode: yes. Component family: high voltage PNP transistor. Configuration: PCB through-hole mounting. Cutoff frequency ft [MHz]: 60 MHz. FT: 80 MHz. Ic(pulse): 100mA. Manufacturer's marking: BF421. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.625W. Minimum hFE gain: 40. Number of terminals: 3. Number of terminals: 3. Pd (Power Dissipation, Max): 830mW. Quantity per case: 1. RoHS: no. Saturation voltage VCE(sat): 0.2V. Semiconductor material: silicon. Spec info: complementary transistor (pair) BF420. Technology: 'Triple Diffused Planar Transistor'. Temperature: +150°C. Type of transistor: PNP. Vcbo: 300V. Vebo: 5V. Original product from manufacturer: Toshiba. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 13:31

Technical documentation (PDF)
BF421
33 parameters
Housing
TO-92
Housing (JEDEC standard)
TO-226AA
Collector-emitter voltage Uceo [V]
300V
Collector current Ic [A], max.
500mA
Collector current
50mA
Housing (according to data sheet)
TO-92
Collector/emitter voltage Vceo
300V
Assembly/installation
PCB through-hole mounting
CE diode
yes
Component family
high voltage PNP transistor
Configuration
PCB through-hole mounting
Cutoff frequency ft [MHz]
60 MHz
FT
80 MHz
Ic(pulse)
100mA
Manufacturer's marking
BF421
Max temperature
+150°C.
Maximum dissipation Ptot [W]
0.625W
Minimum hFE gain
40
Number of terminals
3
Number of terminals
3
Pd (Power Dissipation, Max)
830mW
Quantity per case
1
RoHS
no
Saturation voltage VCE(sat)
0.2V
Semiconductor material
silicon
Spec info
complementary transistor (pair) BF420
Technology
'Triple Diffused Planar Transistor'
Temperature
+150°C
Type of transistor
PNP
Vcbo
300V
Vebo
5V
Original product from manufacturer
Toshiba
Minimum quantity
10