NPN transistor BFG591, 200mA, SOT-223 ( TO-226 ), SOT-223, 15V. Collector current: 200mA. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 15V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Cost): 0.7pF. FT: 7GHz. Function: For VHF/UHF antenna amplifier and RF communication applications. Max hFE gain: 250. Minimum hFE gain: 60. Number of terminals: 4. Operating temperature: -60...+150°C. Pd (Power Dissipation, Max): 2W. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Temperature: +150°C. Type of transistor: NPN. Vcbo: 20V. Vebo: 3V. Original product from manufacturer: Philips Semiconductors. Quantity in stock updated on 13/11/2025, 13:31