Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.78$ | 0.84$ |
5 - 9 | 0.74$ | 0.80$ |
10 - 24 | 0.71$ | 0.77$ |
25 - 49 | 0.70$ | 0.76$ |
50 - 99 | 0.46$ | 0.50$ |
100 - 249 | 0.44$ | 0.48$ |
250 - 736 | 0.43$ | 0.46$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.78$ | 0.84$ |
5 - 9 | 0.74$ | 0.80$ |
10 - 24 | 0.71$ | 0.77$ |
25 - 49 | 0.70$ | 0.76$ |
50 - 99 | 0.46$ | 0.50$ |
100 - 249 | 0.44$ | 0.48$ |
250 - 736 | 0.43$ | 0.46$ |
NPN transistor, TO-50, 0.025A, TO-50-3, 25V - BFW92A. NPN transistor, TO-50, 0.025A, TO-50-3, 25V. Housing: TO-50. Collector current: 0.025A. Housing (according to data sheet): TO-50-3. Collector/emitter voltage Vceo: 25V. Resistor B: no. BE diode: high frequency NPN transistor. BE resistor: PCB soldering (SMD). C(in): TO-50. CE diode: surface-mounted component (SMD). Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3.2GHz. Function: Wide band RF amplifier up to GHz range.. Max hFE gain: 150. Minimum hFE gain: 20. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. Spec info: 'Planar RF Transistor'. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 25V. Saturation voltage VCE(sat): 0.1V. Original product from manufacturer Vishay (temic). Quantity in stock updated on 18/06/2025, 11:25.
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