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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 6A, TO-220FP, TO-220F, 450V - BUT18AF-PHI

NPN transistor, 6A, TO-220FP, TO-220F, 450V - BUT18AF-PHI
Quantity excl. VAT VAT incl.
1 - 4 5.55$ 6.00$
5 - 9 5.27$ 5.70$
10 - 24 5.10$ 5.51$
25 - 49 4.99$ 5.39$
50 - 99 4.88$ 5.28$
100 - 249 4.71$ 5.09$
250+ 4.55$ 4.92$
Quantity U.P
1 - 4 5.55$ 6.00$
5 - 9 5.27$ 5.70$
10 - 24 5.10$ 5.51$
25 - 49 4.99$ 5.39$
50 - 99 4.88$ 5.28$
100 - 249 4.71$ 5.09$
250+ 4.55$ 4.92$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

NPN transistor, 6A, TO-220FP, TO-220F, 450V - BUT18AF-PHI. NPN transistor, 6A, TO-220FP, TO-220F, 450V. Collector current: 6A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: S-L. Pd (Power Dissipation, Max): 33W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1000V. Original product from manufacturer Philips Semiconductors. Quantity in stock updated on 17/06/2025, 21:25.

Equivalent products :

Quantity in stock : 31
BUT18AF

BUT18AF

NPN transistor, 6A, TO-220FP, TO-220F, 450V. Collector current: 6A. Housing: TO-220FP. Housing (acco...
BUT18AF
NPN transistor, 6A, TO-220FP, TO-220F, 450V. Collector current: 6A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: high voltage, high speed. Max hFE gain: 35. Minimum hFE gain: 10. Ic(pulse): 12A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 33W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 1.5V. Vebo: 9V
BUT18AF
NPN transistor, 6A, TO-220FP, TO-220F, 450V. Collector current: 6A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: high voltage, high speed. Max hFE gain: 35. Minimum hFE gain: 10. Ic(pulse): 12A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 33W. Assembly/installation: PCB through-hole mounting. Tf(max): 0.8us. Type of transistor: NPN. Vcbo: 1000V. Saturation voltage VCE(sat): 1.5V. Vebo: 9V
Set of 1
1.59$ VAT incl.
(1.47$ excl. VAT)
1.59$

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BUT11A

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NPN transistor, 5A, TO-220, TO-220, 450V. Collector current: 5A. Housing: TO-220. Housing (according...
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