NPN-Transistor DTA143ZT, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V

NPN-Transistor DTA143ZT, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V

Quantity
Unit price
10-24
0.13$
25-49
0.11$
50-99
0.10$
100+
0.0856$
Quantity in stock: 65
Minimum: 10

NPN-Transistor DTA143ZT, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. Assembly/installation: surface-mounted component (SMD). BE diode: no. BE resistor: 47k Ohms. CE diode: no. Cost): 3pF. Function: PNP resistor-equipped transistor. Ic(pulse): 100mA. Minimum hFE gain: 100. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 0.25W. Quantity per case: 1. Resistor B: 4.7k Ohms. RoHS: yes. Saturation voltage VCE(sat): 0.1V. Semiconductor material: silicon. Spec info: screen printing/SMD code 19. Type of transistor: PNP. Vcbo: 50V. Vebo: 10V. Original product from manufacturer: Nxp Semiconductors. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 13:03

Technical documentation (PDF)
DTA143ZT
26 parameters
Collector current
100mA
Housing
SOT-23 ( TO-236 )
Housing (according to data sheet)
SOT-23 ( TO236 )
Collector/emitter voltage Vceo
50V
Assembly/installation
surface-mounted component (SMD)
BE diode
no
BE resistor
47k Ohms
CE diode
no
Cost)
3pF
Function
PNP resistor-equipped transistor
Ic(pulse)
100mA
Minimum hFE gain
100
Number of terminals
3
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
0.25W
Quantity per case
1
Resistor B
4.7k Ohms
RoHS
yes
Saturation voltage VCE(sat)
0.1V
Semiconductor material
silicon
Spec info
screen printing/SMD code 19
Type of transistor
PNP
Vcbo
50V
Vebo
10V
Original product from manufacturer
Nxp Semiconductors
Minimum quantity
10