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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 2A, 30 v - KSC2328A-Y

NPN transistor, 2A, 30 v - KSC2328A-Y
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.05$ 2.22$
5 - 9 1.95$ 2.11$
10 - 24 1.84$ 1.99$
25 - 49 1.74$ 1.88$
50 - 99 1.70$ 1.84$
100 - 249 1.66$ 1.79$
250+ 1.58$ 1.71$
Quantity U.P
1 - 4 2.05$ 2.22$
5 - 9 1.95$ 2.11$
10 - 24 1.84$ 1.99$
25 - 49 1.74$ 1.88$
50 - 99 1.70$ 1.84$
100 - 249 1.66$ 1.79$
250+ 1.58$ 1.71$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

NPN transistor, 2A, 30 v - KSC2328A-Y. NPN transistor, 2A, 30 v. Collector current: 2A. Collector/emitter voltage Vceo: 30 v. Resistor B: 10. BE resistor: 10. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Pd (Power Dissipation, Max): 1W. Type of transistor: NPN. Spec info: TO-92M (hauteur 9mm). BE diode: no. CE diode: no. Quantity in stock updated on 28/04/2025, 21:25.

Equivalent products :

Quantity in stock : 19
2SD1207

2SD1207

NPN transistor, 2A, TO-92, TO-92MOD ( 2-5J1A ), 50V. Collector current: 2A. Housing: TO-92. Housing ...
2SD1207
NPN transistor, 2A, TO-92, TO-92MOD ( 2-5J1A ), 50V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Collector/emitter voltage Vceo: 50V. Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Ic(pulse): 4A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Silicon Darlington Transistor'. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.15V. Vebo: 6V. Spec info: complementary transistor (pair) 2SB892. BE diode: no. CE diode: no
2SD1207
NPN transistor, 2A, TO-92, TO-92MOD ( 2-5J1A ), 50V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Collector/emitter voltage Vceo: 50V. Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Ic(pulse): 4A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Silicon Darlington Transistor'. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.15V. Vebo: 6V. Spec info: complementary transistor (pair) 2SB892. BE diode: no. CE diode: no
Set of 1
1.32$ VAT incl.
(1.22$ excl. VAT)
1.32$

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2SC3856

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2SC1815

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BC550C

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TDA2822M

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CERM-20K-19

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Resistance: 20k Ohms. Number of turns: 15. Width: 19mm. Note: CERMET 0.75W. Note: T-18 series. Note:...
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