NPN transistor, 8A, D-PAK ( TO-252 ), DPAK CASE 369C, 80V - MJD45H11T4G

Quantity	excl. VAT	VAT incl.
1 - 4	1.56$	1.69$
5 - 9	1.48$	1.60$
10 - 24	1.41$	1.52$
25 - 49	1.33$	1.44$
50 - 99	1.30$	1.41$
100 - 151	1.14$	1.23$

Quantity	U.P
1 - 4	1.56$	1.69$
5 - 9	1.48$	1.60$
10 - 24	1.41$	1.52$
25 - 49	1.33$	1.44$
50 - 99	1.30$	1.41$
100 - 151	1.14$	1.23$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 151

Set of 1

NPN transistor, 8A, D-PAK ( TO-252 ), DPAK CASE 369C, 80V - MJD45H11T4G. NPN transistor, 8A, D-PAK ( TO-252 ), DPAK CASE 369C, 80V. Collector current: 8A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): DPAK CASE 369C. Collector/emitter voltage Vceo: 80V. Cost): 45pF. Quantity per case: 1. Semiconductor material: silicon. FT: 85 MHz. Function: Complementary power transistors. Max hFE gain: 40. Minimum hFE gain: 60. Ic(pulse): 16A. Marking on the case: 45H11G. Equivalents: MJD45H11G, MJD45H11J. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Silicon Transistor'. Tf (type): 140 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: complementary transistor (pair) MJD45H11T4G. BE diode: no. CE diode: no. Quantity in stock updated on 28/04/2025, 15:25.