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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 5A, TO-126 (TO-225, SOT-32), TO-225, 40V - MJE210G

NPN-Transistor, 5A, TO-126 (TO-225, SOT-32), TO-225, 40V - MJE210G
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.01$ 1.09$
5 - 9 0.96$ 1.04$
10 - 24 0.93$ 1.01$
25 - 49 0.91$ 0.98$
50 - 99 0.89$ 0.96$
100 - 249 0.74$ 0.80$
250 - 496 0.72$ 0.78$
Quantity U.P
1 - 4 1.01$ 1.09$
5 - 9 0.96$ 1.04$
10 - 24 0.93$ 1.01$
25 - 49 0.91$ 0.98$
50 - 99 0.89$ 0.96$
100 - 249 0.74$ 0.80$
250 - 496 0.72$ 0.78$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 496
Set of 1

NPN-Transistor, 5A, TO-126 (TO-225, SOT-32), TO-225, 40V - MJE210G. NPN-Transistor, 5A, TO-126 (TO-225, SOT-32), TO-225, 40V. Collector current: 5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 40V. BE diode: no. Cost): 120pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 65MHz. Pd (Power Dissipation, Max): 15W. Spec info: complementary transistor (pair) MJE200. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1.8V. Vebo: 8V. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 16/06/2025, 11:25.

Technical documentation

Equivalent products :

Quantity in stock : 393
MJE253G

MJE253G

NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-225, 100V, -100V, -4A, TO-126. Collector current: 4A...
MJE253G
NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-225, 100V, -100V, -4A, TO-126. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 100V. Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Housing: TO-126. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. RoHS: yes. Spec info: complementary transistor (pair) MJE243. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Vebo: 7V. Type of transistor: Power Transistor. Polarity: PNP. Power: 15W. Max frequency: 40 MHz
MJE253G
NPN-Transistor, 4A, TO-126 (TO-225, SOT-32), TO-225, 100V, -100V, -4A, TO-126. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 100V. Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Housing: TO-126. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. RoHS: yes. Spec info: complementary transistor (pair) MJE243. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Vebo: 7V. Type of transistor: Power Transistor. Polarity: PNP. Power: 15W. Max frequency: 40 MHz
Set of 1
1.23$ VAT incl.
(1.14$ excl. VAT)
1.23$

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