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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 5A, TO-225, 40V, TO-126 (TO-225, SOT-32) - MJE210G

NPN-Transistor, 5A, TO-225, 40V, TO-126 (TO-225, SOT-32) - MJE210G
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.01$ 1.09$
5 - 9 0.96$ 1.04$
10 - 24 0.91$ 0.98$
25 - 49 0.85$ 0.92$
50 - 99 0.83$ 0.90$
100 - 249 0.71$ 0.77$
250 - 498 0.67$ 0.72$
Quantity U.P
1 - 4 1.01$ 1.09$
5 - 9 0.96$ 1.04$
10 - 24 0.91$ 0.98$
25 - 49 0.85$ 0.92$
50 - 99 0.83$ 0.90$
100 - 249 0.71$ 0.77$
250 - 498 0.67$ 0.72$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 498
Set of 1

NPN-Transistor, 5A, TO-225, 40V, TO-126 (TO-225, SOT-32) - MJE210G. NPN-Transistor, 5A, TO-225, 40V, TO-126 (TO-225, SOT-32). Collector current: 5A. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 40V. Housing: TO-126 (TO-225, SOT-32). Cost): 120pF. Quantity per case: 1. Semiconductor material: silicon. FT: 65MHz. Pd (Power Dissipation, Max): 15W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1.8V. Vebo: 8V. Spec info: complementary transistor (pair) MJE200. BE diode: no. CE diode: no. Quantity in stock updated on 28/04/2025, 11:25.

Technical documentation

Equivalent products :

Quantity in stock : 413
MJE253G

MJE253G

NPN-Transistor, -100V, -4A, TO-126, 4A, TO-225, 100V, TO-126 (TO-225, SOT-32). Collector-Emitter Vol...
MJE253G
NPN-Transistor, -100V, -4A, TO-126, 4A, TO-225, 100V, TO-126 (TO-225, SOT-32). Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Housing: TO-126. Collector current: 4A. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 100V. Housing: TO-126 (TO-225, SOT-32). Type of transistor: Power Transistor. Polarity: PNP. Power: 15W. Max frequency: 40 MHz. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Vebo: 7V. Spec info: complementary transistor (pair) MJE243
MJE253G
NPN-Transistor, -100V, -4A, TO-126, 4A, TO-225, 100V, TO-126 (TO-225, SOT-32). Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Housing: TO-126. Collector current: 4A. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 100V. Housing: TO-126 (TO-225, SOT-32). Type of transistor: Power Transistor. Polarity: PNP. Power: 15W. Max frequency: 40 MHz. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Vebo: 7V. Spec info: complementary transistor (pair) MJE243
Set of 1
1.23$ VAT incl.
(1.14$ excl. VAT)
1.23$

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