Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.14$ | 1.23$ |
5 - 9 | 1.09$ | 1.18$ |
10 - 24 | 1.03$ | 1.11$ |
25 - 49 | 0.97$ | 1.05$ |
50 - 99 | 0.95$ | 1.03$ |
100 - 249 | 0.83$ | 0.90$ |
250 - 413 | 0.88$ | 0.95$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.14$ | 1.23$ |
5 - 9 | 1.09$ | 1.18$ |
10 - 24 | 1.03$ | 1.11$ |
25 - 49 | 0.97$ | 1.05$ |
50 - 99 | 0.95$ | 1.03$ |
100 - 249 | 0.83$ | 0.90$ |
250 - 413 | 0.88$ | 0.95$ |
NPN-Transistor, -100V, -4A, TO-126, 4A, TO-225, 100V, TO-126 (TO-225, SOT-32) - MJE253G. NPN-Transistor, -100V, -4A, TO-126, 4A, TO-225, 100V, TO-126 (TO-225, SOT-32). Collector-Emitter Voltage VCEO: -100V. Collector current: -4A. Housing: TO-126. Collector current: 4A. Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 100V. Housing: TO-126 (TO-225, SOT-32). Type of transistor: Power Transistor. Polarity: PNP. Power: 15W. Max frequency: 40 MHz. Semiconductor material: silicon. FT: 40 MHz. Function: High speed switching. Audio. Max hFE gain: 180. Minimum hFE gain: 40. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.3V. Vebo: 7V. Spec info: complementary transistor (pair) MJE243. Quantity in stock updated on 28/04/2025, 11:25.
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