NPN transistor MMBT5401, SOT-23 ( TO-236 ), 600mA, 0.5A, SOT-23 ( TO236 ), 150V. Housing: SOT-23 ( TO-236 ). Collector current Ic [A], max.: 600mA. Collector current: 0.5A. Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 150V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Collector current Ic [A]: 0.6A. Collector-emitter voltage Uceo [V]: 150V. Component family: PNP transistor. Conditioning unit: 3000. Configuration: surface-mounted component (SMD). Cost): 6pF. Cutoff frequency ft [MHz]: 100 MHz. Equivalents: MMBT5401LT1G. FT: 100 MHz. Housing (JEDEC standard): TO-236. Manufacturer's marking: 2L. Marking on the case: 2 L. Max hFE gain: 240. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.250W. Minimum hFE gain: 50. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 300mW. Polarity: bipolar. Power: 350mW. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.2V. Semiconductor material: silicon. Spec info: screen printing/SMD code (2Lx Date Code). Type of transistor: NPN. Vcbo: 160V. Vebo: 5V. Voltage (collector - emitter): 150V. Original product from manufacturer: Diotec Semiconductor. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 18:37