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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 0.1A, TO-92, TO-92A, 12V - MPS9630

NPN transistor, 0.1A, TO-92, TO-92A, 12V - MPS9630
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.11$ 1.20$
5 - 9 1.06$ 1.15$
10 - 24 1.02$ 1.10$
25 - 49 1.00$ 1.08$
50 - 99 0.98$ 1.06$
100 - 249 0.94$ 1.02$
250+ 0.91$ 0.98$
Quantity U.P
1 - 4 1.11$ 1.20$
5 - 9 1.06$ 1.15$
10 - 24 1.02$ 1.10$
25 - 49 1.00$ 1.08$
50 - 99 0.98$ 1.06$
100 - 249 0.94$ 1.02$
250+ 0.91$ 0.98$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

NPN transistor, 0.1A, TO-92, TO-92A, 12V - MPS9630. NPN transistor, 0.1A, TO-92, TO-92A, 12V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92A. Collector/emitter voltage Vceo: 12V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Max hFE gain: 600. Minimum hFE gain: 45. Pd (Power Dissipation, Max): 0.35W. Spec info: MPS9630K. Type of transistor: NPN. Saturation voltage VCE(sat): 0.5V. Original product from manufacturer Motorola. Quantity in stock updated on 16/06/2025, 15:25.

Equivalent products :

Quantity in stock : 67
2SC2240BL

2SC2240BL

NPN transistor, 0.1A, TO-92, TO-92, 120V. Collector current: 0.1A. Housing: TO-92. Housing (accordin...
2SC2240BL
NPN transistor, 0.1A, TO-92, TO-92, 120V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Low noise, Audio amplifier. Max hFE gain: 700. Minimum hFE gain: 350. Marking on the case: C2240BL. Number of terminals: 3. Temperature: +125°C. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Spec info: complementary transistor (pair) 2SA970BL. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: NPN. Operating temperature: -55...+125°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V
2SC2240BL
NPN transistor, 0.1A, TO-92, TO-92, 120V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Low noise, Audio amplifier. Max hFE gain: 700. Minimum hFE gain: 350. Marking on the case: C2240BL. Number of terminals: 3. Temperature: +125°C. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Spec info: complementary transistor (pair) 2SA970BL. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: NPN. Operating temperature: -55...+125°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V
Set of 1
3.31$ VAT incl.
(3.06$ excl. VAT)
3.31$
Quantity in stock : 4
2SC2240GR

2SC2240GR

NPN transistor, 0.1A, TO-92, TO-92, 120V. Collector current: 0.1A. Housing: TO-92. Housing (accordin...
2SC2240GR
NPN transistor, 0.1A, TO-92, TO-92, 120V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 3pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Marking on the case: C224GR. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Spec info: complementary transistor (pair) 2SA970GR. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: NPN. Operating temperature: -55...+125°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V
2SC2240GR
NPN transistor, 0.1A, TO-92, TO-92, 120V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 3pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Marking on the case: C224GR. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Spec info: complementary transistor (pair) 2SA970GR. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: NPN. Operating temperature: -55...+125°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V
Set of 1
1.20$ VAT incl.
(1.11$ excl. VAT)
1.20$
Quantity in stock : 357
BC546C

BC546C

NPN transistor, 100mA, TO-92, TO-92, 65V. Collector current: 100mA. Housing: TO-92. Housing (accordi...
BC546C
NPN transistor, 100mA, TO-92, TO-92, 65V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 65V. BE diode: no. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 0.25V. Vebo: 6V
BC546C
NPN transistor, 100mA, TO-92, TO-92, 65V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 65V. BE diode: no. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 0.25V. Vebo: 6V
Set of 10
1.34$ VAT incl.
(1.24$ excl. VAT)
1.34$

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BC550C

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BC546B

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BC560C

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2SB647

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