NPN-Transistor MPSA56, TO-92, 0.5A, TO-92AMMO, 80V

NPN-Transistor MPSA56, TO-92, 0.5A, TO-92AMMO, 80V

Quantity
Unit price
5-24
0.16$
25-49
0.14$
50-99
0.12$
100+
0.0960$
+25 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Quantity in stock: 367
Minimum: 5

NPN-Transistor MPSA56, TO-92, 0.5A, TO-92AMMO, 80V. Housing: TO-92. Collector current: 0.5A. Housing (according to data sheet): TO-92AMMO. Collector/emitter voltage Vceo: 80V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Collector current Ic [A]: 0.5A. FT: 50 MHz. Frequency: 50MHz. Function: NF-TR. Gain hfe: 100. Ic(pulse): 1A. Manufacturer's marking: MPSA56. Max hFE gain: -. Maximum saturation voltage VCE(sat): 0.25V. Minimum hFE gain: 100. Operating temperature: -55...+150°C. Packaging: Ammo Pack. Pd (Power Dissipation, Max): 0.625W. Polarity: bipolar. Power: 0.625W. Quantity per case: 1. Semiconductor material: silicon. Spec info: complementary transistor (pair) MPSA06. Type of transistor: PNP. Vcbo: 80V. Voltage (collector - emitter): 80V. Original product from manufacturer: Diotec Semiconductor. Minimum quantity: 5. Quantity in stock updated on 13/11/2025, 22:19

Technical documentation (PDF)
MPSA56
29 parameters
Housing
TO-92
Collector current
0.5A
Housing (according to data sheet)
TO-92AMMO
Collector/emitter voltage Vceo
80V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Collector current Ic [A]
0.5A
FT
50 MHz
Frequency
50MHz
Function
NF-TR
Gain hfe
100
Ic(pulse)
1A
Manufacturer's marking
MPSA56
Maximum saturation voltage VCE(sat)
0.25V
Minimum hFE gain
100
Operating temperature
-55...+150°C
Packaging
Ammo Pack
Pd (Power Dissipation, Max)
0.625W
Polarity
bipolar
Power
0.625W
Quantity per case
1
Semiconductor material
silicon
Spec info
complementary transistor (pair) MPSA06
Type of transistor
PNP
Vcbo
80V
Voltage (collector - emitter)
80V
Original product from manufacturer
Diotec Semiconductor
Minimum quantity
5