NPN transistor, 5A, SOT-223 ( TO-226 ), SOT-223, 60V - STN851
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 9 | 0.92$ | 0.99$ |
| 10 - 24 | 0.87$ | 0.94$ |
| 25 - 49 | 0.82$ | 0.89$ |
| 50 - 99 | 0.78$ | 0.84$ |
| 100 - 249 | 0.76$ | 0.82$ |
| 250 - 499 | 0.74$ | 0.80$ |
| 500 - 967 | 0.65$ | 0.70$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 9 | 0.92$ | 0.99$ |
| 10 - 24 | 0.87$ | 0.94$ |
| 25 - 49 | 0.82$ | 0.89$ |
| 50 - 99 | 0.78$ | 0.84$ |
| 100 - 249 | 0.76$ | 0.82$ |
| 250 - 499 | 0.74$ | 0.80$ |
| 500 - 967 | 0.65$ | 0.70$ |
NPN transistor, 5A, SOT-223 ( TO-226 ), SOT-223, 60V - STN851. NPN transistor, 5A, SOT-223 ( TO-226 ), SOT-223, 60V. Collector current: 5A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 60V. Cost): 215pF. Conditioning: roll. Semiconductor material: silicon. FT: 130 MHz. Function: Low voltage fast-switching NPN power transistor. Max hFE gain: 350. Minimum hFE gain: 30. Ic(pulse): 10A. Pd (Power Dissipation, Max): 1.6W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.32V. Vebo: 7V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 1000. BE diode: no. CE diode: no. Quantity in stock updated on 28/04/2025, 09:25.
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