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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 1A, TO-92, TO-92, 45V - ZTX550

NPN-Transistor, 1A, TO-92, TO-92, 45V - ZTX550
Quantity excl. VAT VAT incl.
1 - 4 1.63$ 1.76$
5 - 9 1.55$ 1.68$
10 - 24 1.50$ 1.62$
25 - 49 1.47$ 1.59$
50 - 99 1.44$ 1.56$
100 - 249 1.39$ 1.50$
250+ 1.34$ 1.45$
Quantity U.P
1 - 4 1.63$ 1.76$
5 - 9 1.55$ 1.68$
10 - 24 1.50$ 1.62$
25 - 49 1.47$ 1.59$
50 - 99 1.44$ 1.56$
100 - 249 1.39$ 1.50$
250+ 1.34$ 1.45$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

NPN-Transistor, 1A, TO-92, TO-92, 45V - ZTX550. NPN-Transistor, 1A, TO-92, TO-92, 45V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 15pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Type of transistor: PNP. Vcbo: 60V. Maximum saturation voltage VCE(sat): 0.25V. Vebo: 5V. Original product from manufacturer Diodes Inc.. Quantity in stock updated on 16/06/2025, 02:25.

Equivalent products :

Quantity in stock : 268
BC327-25

BC327-25

NPN-Transistor, 0.8A, TO-92, TO-92, 50V. Collector current: 0.8A. Housing: TO-92. Housing (according...
BC327-25
NPN-Transistor, 0.8A, TO-92, TO-92, 50V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: hFE 160-400. Max hFE gain: 400. Minimum hFE gain: 160. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC337-25. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V
BC327-25
NPN-Transistor, 0.8A, TO-92, TO-92, 50V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: hFE 160-400. Max hFE gain: 400. Minimum hFE gain: 160. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC337-25. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V
Set of 10
1.22$ VAT incl.
(1.13$ excl. VAT)
1.22$
Quantity in stock : 2510
BC640

BC640

NPN-Transistor, 1A, TO-92, TO-92, 80V. Collector current: 1A. Housing: TO-92. Housing (according to ...
BC640
NPN-Transistor, 1A, TO-92, TO-92, 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: PNP/100V/1A BIPOLAR TRANSISTOR. Max hFE gain: 250. Minimum hFE gain: 40. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Spec info: complementary transistor (pair) BC639. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V
BC640
NPN-Transistor, 1A, TO-92, TO-92, 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: PNP/100V/1A BIPOLAR TRANSISTOR. Max hFE gain: 250. Minimum hFE gain: 40. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Spec info: complementary transistor (pair) BC639. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V
Set of 1
0.27$ VAT incl.
(0.25$ excl. VAT)
0.27$
Quantity in stock : 3369
BC327-25-AMMO

BC327-25-AMMO

NPN-Transistor, 0.8A, TO-92, TO-92 ( Ammo Pack ), 50V. Collector current: 0.8A. Housing: TO-92. Hous...
BC327-25-AMMO
NPN-Transistor, 0.8A, TO-92, TO-92 ( Ammo Pack ), 50V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: hFE 160-400. Max hFE gain: 400. Minimum hFE gain: 160. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC337-25. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V
BC327-25-AMMO
NPN-Transistor, 0.8A, TO-92, TO-92 ( Ammo Pack ), 50V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: hFE 160-400. Max hFE gain: 400. Minimum hFE gain: 160. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC337-25. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V
Set of 10
1.21$ VAT incl.
(1.12$ excl. VAT)
1.21$
Quantity in stock : 43
ZTX551

ZTX551

NPN-Transistor, 1A, TO-92, TO-92, 60V. Collector current: 1A. Housing: TO-92. Housing (according to ...
ZTX551
NPN-Transistor, 1A, TO-92, TO-92, 60V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 15pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Spec info: complementary transistor (pair) ZTX451. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Type of transistor: PNP. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.35V. Vebo: 5V
ZTX551
NPN-Transistor, 1A, TO-92, TO-92, 60V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 15pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Spec info: complementary transistor (pair) ZTX451. Assembly/installation: PCB through-hole mounting. Technology: PLANAR TRANSISTOR. Type of transistor: PNP. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.35V. Vebo: 5V
Set of 1
1.76$ VAT incl.
(1.63$ excl. VAT)
1.76$

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