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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 4.6A, 7.3A, 100uA, 0.54 Ohms, TO-220, TO-220, 650V - Q67040-S4624

N-channel transistor, 4.6A, 7.3A, 100uA, 0.54 Ohms, TO-220, TO-220, 650V - Q67040-S4624
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 6.95$ 7.51$
5 - 9 6.61$ 7.15$
10 - 24 6.40$ 6.92$
25 - 49 6.12$ 6.62$
50 - 99 5.91$ 6.39$
100 - 436 5.70$ 6.16$
Quantity U.P
1 - 4 6.95$ 7.51$
5 - 9 6.61$ 7.15$
10 - 24 6.40$ 6.92$
25 - 49 6.12$ 6.62$
50 - 99 5.91$ 6.39$
100 - 436 5.70$ 6.16$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 436
Set of 1

N-channel transistor, 4.6A, 7.3A, 100uA, 0.54 Ohms, TO-220, TO-220, 650V - Q67040-S4624. N-channel transistor, 4.6A, 7.3A, 100uA, 0.54 Ohms, TO-220, TO-220, 650V. ID (T=100°C): 4.6A. ID (T=25°C): 7.3A. Idss (max): 100uA. On-resistance Rds On: 0.54 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 650V. C(in): 30pF. Cost): 55pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. G-S Protection: no. Id(imp): 21.9A. IDss (min): 0.5uA. Marking on the case: 07N65C3. Number of terminals: 3. Pd (Power Dissipation, Max): 83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 17/06/2025, 06:25.

Technical documentation

Equivalent products :

Quantity in stock : 25
STP10NK80Z

STP10NK80Z

N-channel transistor, 6A, 9A, 50uA, 0.78 Ohms, TO-220, TO-220AB, 800V. ID (T=100°C): 6A. ID (T=25°...
STP10NK80Z
N-channel transistor, 6A, 9A, 50uA, 0.78 Ohms, TO-220, TO-220AB, 800V. ID (T=100°C): 6A. ID (T=25°C): 9A. Idss (max): 50uA. On-resistance Rds On: 0.78 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 800V. C(in): 2180pF. Cost): 205pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 645 ns. Type of transistor: MOSFET. Function: Zener diode protection. G-S Protection: yes. Id(imp): 36A. IDss (min): 1uA. Marking on the case: P10NK80Z. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 30 ns. Technology: SuperMESH ™Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V
STP10NK80Z
N-channel transistor, 6A, 9A, 50uA, 0.78 Ohms, TO-220, TO-220AB, 800V. ID (T=100°C): 6A. ID (T=25°C): 9A. Idss (max): 50uA. On-resistance Rds On: 0.78 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 800V. C(in): 2180pF. Cost): 205pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 645 ns. Type of transistor: MOSFET. Function: Zener diode protection. G-S Protection: yes. Id(imp): 36A. IDss (min): 1uA. Marking on the case: P10NK80Z. Number of terminals: 3. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 30 ns. Technology: SuperMESH ™Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V
Set of 1
4.82$ VAT incl.
(4.46$ excl. VAT)
4.82$

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