Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.89$ | 4.21$ |
5 - 9 | 3.70$ | 4.00$ |
10 - 24 | 3.50$ | 3.78$ |
25 - 49 | 3.65$ | 3.95$ |
50 - 99 | 4.09$ | 4.42$ |
100 - 249 | 4.25$ | 4.59$ |
250 - 377 | 4.24$ | 4.58$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.89$ | 4.21$ |
5 - 9 | 3.70$ | 4.00$ |
10 - 24 | 3.50$ | 3.78$ |
25 - 49 | 3.65$ | 3.95$ |
50 - 99 | 4.09$ | 4.42$ |
100 - 249 | 4.25$ | 4.59$ |
250 - 377 | 4.24$ | 4.58$ |
N-channel transistor, PCB soldering, TO-220AB, 60V, 70A, TO-220, TO-220, 60V, 50 - RFP70N06. N-channel transistor, PCB soldering, TO-220AB, 60V, 70A, TO-220, TO-220, 60V, 50. Housing: PCB soldering. Housing: TO-220AB. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 70A. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 60V. Housing (JEDEC standard): 50. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: RFP70N06. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.014 Ohms @ 70A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 32 ns. Ciss Gate Capacitance [pF]: 2250pF. Maximum dissipation Ptot [W]: 150W. Assembly/installation: PCB through-hole mounting. Td(off): 32 ns. Td(on): 10 ns. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Technology: MegaFET process, Power MOSFET. Spec info: Temperature Compensated PSPICE® Model. Quantity in stock updated on 29/04/2025, 03:25.
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