N-channel transistor, 30A, TO-3PN ( 2-16C1B ), TO-3PN, 600V - SGH30N60RUFD

Quantity	excl. VAT	VAT incl.
1 - 1	8.14$	8.80$
2 - 2	7.74$	8.37$
3 - 4	7.33$	7.92$
5 - 9	6.92$	7.48$
10 - 19	6.76$	7.31$
20 - 29	6.60$	7.13$
30 - 44	6.35$	6.86$

Quantity	U.P
1 - 1	8.14$	8.80$
2 - 2	7.74$	8.37$
3 - 4	7.33$	7.92$
5 - 9	6.92$	7.48$
10 - 19	6.76$	7.31$
20 - 29	6.60$	7.13$
30 - 44	6.35$	6.86$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 44

Set of 1

N-channel transistor, 30A, TO-3PN ( 2-16C1B ), TO-3PN, 600V - SGH30N60RUFD. N-channel transistor, 30A, TO-3PN ( 2-16C1B ), TO-3PN, 600V. Ic(T=100°C): 30A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 600V. C(in): 1970pF. Cost): 310pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 50 ns. Function: High Speed IGBT. Collector current: 48A. Ic(pulse): 90A. Marking on the case: G30N60RUFD. Number of terminals: 3. Pd (Power Dissipation, Max): 235W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 54 ns. Td(on): 30 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.2V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. Spec info: Ic 48A @ 25°C, 30A @ 110°C, Icm 90A (pulsed). CE diode: yes. Germanium diode: no. Quantity in stock updated on 28/04/2025, 12:25.

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