SI2333CDS-T1-E3
Quantity
Unit price
5-9
1.28$
10-49
1.14$
50-199
1.03$
200-2999
0.96$
3000+
0.75$
| Quantity in stock: 2925 |
SI2333CDS-T1-E3. Features: -. Gate/source voltage Vgs max: ±8V. Id @ Tc=25°C (Continuous Drain Current): 7.1A. Information: -. MSL: -. Mounting Type: Surface Mount. Polarity: MOSFET P. Series: TrenchFET. Vdss (Drain to Source Voltage): 12V. Original product from manufacturer: Vishay Siliconix. Minimum quantity: 5. Quantity in stock updated on 15/02/2026, 06:30
SI2333CDS-T1-E3
8 parameters
Gate/source voltage Vgs max
±8V
Id @ Tc=25°C (Continuous Drain Current)
7.1A
Mounting Type
Surface Mount
Polarity
MOSFET P
Series
TrenchFET
Vdss (Drain to Source Voltage)
12V
Original product from manufacturer
Vishay Siliconix
Minimum quantity
5