Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.66$ | 0.71$ |
10 - 24 | 0.62$ | 0.67$ |
25 - 49 | 0.60$ | 0.65$ |
50 - 99 | 0.59$ | 0.64$ |
100 - 249 | 0.58$ | 0.63$ |
250 - 499 | 0.56$ | 0.61$ |
500+ | 0.54$ | 0.58$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.66$ | 0.71$ |
10 - 24 | 0.62$ | 0.67$ |
25 - 49 | 0.60$ | 0.65$ |
50 - 99 | 0.59$ | 0.64$ |
100 - 249 | 0.58$ | 0.63$ |
250 - 499 | 0.56$ | 0.61$ |
500+ | 0.54$ | 0.58$ |
SMBJ6-0A. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: protection against overvoltage. IFSM: 100A. Number of terminals: 2. Pd (Power Dissipation, Max): 600W. RoHS: yes. Spec info: Ppk--600W t=1ms, IFSM--100Ap t=8.3ms. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC DO214AB ( 5.2x3.6mm ). Tolerance: 5%. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 5V. Forward voltage Vf (min): 3.5V. VRRM: 6V. Quantity in stock updated on 16/06/2025, 02:25.
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