N-channel transistor, 28A, 30A, 100uA, 100uA, 0.023 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v - SPD28N03L

Quantity	excl. VAT	VAT incl.
1 - 4	1.66$	1.79$
5 - 9	1.58$	1.71$
10 - 24	1.49$	1.61$
25 - 49	1.41$	1.52$
50 - 99	1.38$	1.49$
100 - 249	1.34$	1.45$
250 - 348	1.28$	1.38$

Quantity	U.P
1 - 4	1.66$	1.79$
5 - 9	1.58$	1.71$
10 - 24	1.49$	1.61$
25 - 49	1.41$	1.52$
50 - 99	1.38$	1.49$
100 - 249	1.34$	1.45$
250 - 348	1.28$	1.38$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 348

Set of 1

N-channel transistor, 28A, 30A, 100uA, 100uA, 0.023 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v - SPD28N03L. N-channel transistor, 28A, 30A, 100uA, 100uA, 0.023 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 30 v. ID (T=100°C): 28A. ID (T=25°C): 30A. Idss: 100uA. Idss (max): 100uA. On-resistance Rds On: 0.023 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 30 v. C(in): 790pF. Cost): 390pF. Channel type: N. Trr Diode (Min.): 32 ns. Type of transistor: MOSFET. Function: logic level gated MOSFET transistor. Id(imp): 112A. Marking on the case: 28N03L. Pd (Power Dissipation, Max): 75W. Assembly/installation: surface-mounted component (SMD). Td(off): 12 ns. Td(on): 13 ns. Technology: SIPMOS Power Transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1.6V. Number of terminals: 2. Quantity per case: 1. Quantity in stock updated on 27/04/2025, 16:25.

Technical documentation