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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 13A, 20A, 250uA, 0.16 Ohms, TO-220, TO-220, 650V - SPP20N60S5

N-channel transistor, 13A, 20A, 250uA, 0.16 Ohms, TO-220, TO-220, 650V - SPP20N60S5
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Quantity excl. VAT VAT incl.
1 - 1 10.98$ 11.87$
2 - 2 10.43$ 11.27$
3 - 4 10.10$ 10.92$
5 - 9 9.88$ 10.68$
10 - 19 9.66$ 10.44$
20 - 29 9.33$ 10.09$
30 - 36 9.00$ 9.73$
Quantity U.P
1 - 1 10.98$ 11.87$
2 - 2 10.43$ 11.27$
3 - 4 10.10$ 10.92$
5 - 9 9.88$ 10.68$
10 - 19 9.66$ 10.44$
20 - 29 9.33$ 10.09$
30 - 36 9.00$ 9.73$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 36
Set of 1

N-channel transistor, 13A, 20A, 250uA, 0.16 Ohms, TO-220, TO-220, 650V - SPP20N60S5. N-channel transistor, 13A, 20A, 250uA, 0.16 Ohms, TO-220, TO-220, 650V. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.16 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 650V. RoHS: yes. C(in): 3000pF. Cost): 1170pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 610 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. G-S Protection: no. Id(imp): 40A. IDss (min): 0.5uA. Marking on the case: 20N60S5. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 120ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 4.5V. Original product from manufacturer Infineon. Quantity in stock updated on 22/08/2025, 14:15.

Technical documentation

Equivalent products :

Quantity in stock : 53
SPP20N60C3

SPP20N60C3

N-channel transistor, 13.1A, 20.7A, 100uA, 0.16 Ohms, TO-220, P-TO220-3-1, 650V. ID (T=100°C): 13.1...
SPP20N60C3
N-channel transistor, 13.1A, 20.7A, 100uA, 0.16 Ohms, TO-220, P-TO220-3-1, 650V. ID (T=100°C): 13.1A. ID (T=25°C): 20.7A. Idss (max): 100uA. On-resistance Rds On: 0.16 Ohms. Housing: TO-220. Housing (according to data sheet): P-TO220-3-1. Voltage Vds(max): 650V. C(in): 2400pF. Cost): 780pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. G-S Protection: no. Id(imp): 62.1A. IDss (min): 0.1uA. Marking on the case: 20N60C3. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 67 ns. Td(on): 10 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V
SPP20N60C3
N-channel transistor, 13.1A, 20.7A, 100uA, 0.16 Ohms, TO-220, P-TO220-3-1, 650V. ID (T=100°C): 13.1A. ID (T=25°C): 20.7A. Idss (max): 100uA. On-resistance Rds On: 0.16 Ohms. Housing: TO-220. Housing (according to data sheet): P-TO220-3-1. Voltage Vds(max): 650V. C(in): 2400pF. Cost): 780pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. G-S Protection: no. Id(imp): 62.1A. IDss (min): 0.1uA. Marking on the case: 20N60C3. Number of terminals: 3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 67 ns. Td(on): 10 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V
Set of 1
10.57$ VAT incl.
(9.78$ excl. VAT)
10.57$

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