Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.32$ | 0.35$ |
10 - 24 | 0.30$ | 0.32$ |
25 - 49 | 0.29$ | 0.31$ |
50 - 99 | 0.28$ | 0.30$ |
100 - 249 | 0.27$ | 0.29$ |
250 - 408 | 0.24$ | 0.26$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.32$ | 0.35$ |
10 - 24 | 0.30$ | 0.32$ |
25 - 49 | 0.29$ | 0.31$ |
50 - 99 | 0.28$ | 0.30$ |
100 - 249 | 0.27$ | 0.29$ |
250 - 408 | 0.24$ | 0.26$ |
SS34. Forward current (AV): 3A. IFSM: 80A. Housing: DO-214. Housing (according to data sheet): DO-214AA (SMB) 4.57x3.94mm. VRRM: 40V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky Barrier Rectifier Diode, Surface Mount. MRI (max): 20mA. MRI (min): 500uA. Marking on the case: SS34. Equivalents: SS34B. Number of terminals: 2. RoHS: yes. Spec info: IFSM--80Ap (tp=8.3ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V. Original product from manufacturer Yangjie Electronic Technology. Quantity in stock updated on 16/06/2025, 01:25.
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