Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.03$ | 2.19$ |
5 - 9 | 1.93$ | 2.09$ |
10 - 24 | 1.82$ | 1.97$ |
25 - 49 | 1.72$ | 1.86$ |
50 - 53 | 1.68$ | 1.82$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.03$ | 2.19$ |
5 - 9 | 1.93$ | 2.09$ |
10 - 24 | 1.82$ | 1.97$ |
25 - 49 | 1.72$ | 1.86$ |
50 - 53 | 1.68$ | 1.82$ |
N-channel transistor, 2.1A, 3.3A, 50uA, 3.3 Ohms, TO-220, TO-220, 600V - STP3NB60. N-channel transistor, 2.1A, 3.3A, 50uA, 3.3 Ohms, TO-220, TO-220, 600V. ID (T=100°C): 2.1A. ID (T=25°C): 3.3A. Idss (max): 50uA. On-resistance Rds On: 3.3 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 400pF. Cost): 57pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 500 ns. Type of transistor: MOSFET. Function: HIGH Current, HIGH Speed Switching. Id(imp): 13.2A. IDss (min): 1uA. Marking on the case: P3NB60. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Td(off): 11 ns. Td(on): 11 ns. Technology: PowerMESH™ MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/04/2025, 23:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.