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NPN-Transistor, 3A, TO-220, TO-220, 115V - TIP32C

NPN-Transistor, 3A, TO-220, TO-220, 115V - TIP32C
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.00$ 1.08$
5 - 9 0.95$ 1.03$
10 - 24 0.92$ 0.99$
25 - 49 0.90$ 0.97$
50 - 90 0.88$ 0.95$
Quantity U.P
1 - 4 1.00$ 1.08$
5 - 9 0.95$ 1.03$
10 - 24 0.92$ 0.99$
25 - 49 0.90$ 0.97$
50 - 90 0.88$ 0.95$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 90
Set of 1

NPN-Transistor, 3A, TO-220, TO-220, 115V - TIP32C. NPN-Transistor, 3A, TO-220, TO-220, 115V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 115V. BE diode: no. Cost): 160pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: PNP TRANS 100V 3. Production date: 201448. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Spec info: complementary transistor (pair) TIP31C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 15/06/2025, 08:25.

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Quantity in stock : 102
BD242C

BD242C

NPN-Transistor, 5A, TO-220, TO-220, 100V. Collector current: 5A. Housing: TO-220. Housing (according...
BD242C
NPN-Transistor, 5A, TO-220, TO-220, 100V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Spec info: complementary transistor (pair) BD241C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Vebo: 5V
BD242C
NPN-Transistor, 5A, TO-220, TO-220, 100V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Spec info: complementary transistor (pair) BD241C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Vebo: 5V
Set of 1
1.52$ VAT incl.
(1.41$ excl. VAT)
1.52$

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