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Semiconductors Diodes Diode rectifier bridges

W02M

W02M
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.37$ 0.40$
10 - 24 0.35$ 0.38$
25 - 49 0.34$ 0.37$
50 - 99 0.33$ 0.36$
100 - 249 0.32$ 0.35$
250 - 499 0.31$ 0.34$
500+ 0.29$ 0.31$
Quantity U.P
1 - 9 0.37$ 0.40$
10 - 24 0.35$ 0.38$
25 - 49 0.34$ 0.37$
50 - 99 0.33$ 0.36$
100 - 249 0.32$ 0.35$
250 - 499 0.31$ 0.34$
500+ 0.29$ 0.31$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

W02M. Diameter: 10mm. Dielectric structure: Diode bridge. Equivalents: RB152. Number of terminals: 4. RoHS: yes. Assembly/installation: PCB through-hole mounting. Original product from manufacturer DC Components. Quantity in stock updated on 15/06/2025, 16:25.

Technical documentation

Equivalent products :

Quantity in stock : 774
W06M

W06M

VRRM: 600V. Forward current (AV): 1.5A. Cj: 24pF. Quantity per case: 4. Dielectric structure: Diode ...
W06M
VRRM: 600V. Forward current (AV): 1.5A. Cj: 24pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Single Phase 1.5 AMPS. IFSM: 50A. Note: diameter 10mm. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.6x5.6mm. RoHS: yes. Spec info: Ifsm--50Ap, (50-60Hz, t=8.3mS). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
W06M
VRRM: 600V. Forward current (AV): 1.5A. Cj: 24pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Single Phase 1.5 AMPS. IFSM: 50A. Note: diameter 10mm. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.6x5.6mm. RoHS: yes. Spec info: Ifsm--50Ap, (50-60Hz, t=8.3mS). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
Set of 1
0.46$ VAT incl.
(0.43$ excl. VAT)
0.46$
Quantity in stock : 173
BR152

BR152

VRRM: 200V. Forward current (AV): 1.5A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode ...
BR152
VRRM: 200V. Forward current (AV): 1.5A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. Note: diameter 10mm. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. RoHS: yes. Spec info: IFSM--50App t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
BR152
VRRM: 200V. Forward current (AV): 1.5A. Cj: 25pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 50A. Note: diameter 10mm. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. RoHS: yes. Spec info: IFSM--50App t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
Set of 1
0.45$ VAT incl.
(0.42$ excl. VAT)
0.45$
Quantity in stock : 217
W10M

W10M

VRRM: 1000V. Forward current (AV): 1.5A. Cj: 24pF. Quantity per case: 4. Dielectric structure: Diode...
W10M
VRRM: 1000V. Forward current (AV): 1.5A. Cj: 24pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Single Phase 1.5 AMPS. IFSM: 50A. Note: diameter 10mm. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.6x5.6mm. RoHS: yes. Spec info: Ifsm--50Ap, (50-60Hz, t=8.3mS). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
W10M
VRRM: 1000V. Forward current (AV): 1.5A. Cj: 24pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Single Phase 1.5 AMPS. IFSM: 50A. Note: diameter 10mm. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.6x5.6mm. RoHS: yes. Spec info: Ifsm--50Ap, (50-60Hz, t=8.3mS). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
Set of 1
0.44$ VAT incl.
(0.41$ excl. VAT)
0.44$
Quantity in stock : 168
B800C1500R

B800C1500R

VRRM: 800V. Forward current (AV): 1.5A. Quantity per case: 4. Dielectric structure: Diode bridge. Se...
B800C1500R
VRRM: 800V. Forward current (AV): 1.5A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Single Phase 1.5 AMPS. IFSM: 50A. Note: diameter 10mm. Dimensions of connections: distance between legs 5.6x5.6mm. Number of terminals: 4. Spec info: IFSM--50A (50-60Hz, t=8.3mS). Assembly/installation: PCB through-hole mounting. Operating temperature: -55°C...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
B800C1500R
VRRM: 800V. Forward current (AV): 1.5A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Single Phase 1.5 AMPS. IFSM: 50A. Note: diameter 10mm. Dimensions of connections: distance between legs 5.6x5.6mm. Number of terminals: 4. Spec info: IFSM--50A (50-60Hz, t=8.3mS). Assembly/installation: PCB through-hole mounting. Operating temperature: -55°C...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
Set of 1
0.43$ VAT incl.
(0.40$ excl. VAT)
0.43$

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