Electronic components and equipment, for businesses and individuals

1N5394

1N5394
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[TITLE]
[TITLE]
Quantity (Set of 10) excl. VAT VAT incl.
1 - 2 0.95$ 1.03$
Quantity (Set of 10) U.P
1 - 2 0.95$ 1.03$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 13
Set of 10

1N5394. Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.3x6.4mm ). VRRM: 300V. Cj: 20pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: high Current Capability, Low Forward Voltage Drop. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Original product from manufacturer Diodes Inc.. Quantity in stock updated on 15/06/2025, 08:25.

Equivalent products :

Quantity in stock : 198
1N5399

1N5399

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3....
1N5399
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.3x6.4mm ). VRRM: 1000V. Cj: 20pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: high Current Capability, Low Forward Voltage Drop. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap, t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
1N5399
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.3x6.4mm ). VRRM: 1000V. Cj: 20pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: high Current Capability, Low Forward Voltage Drop. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap, t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
Set of 10
0.91$ VAT incl.
(0.84$ excl. VAT)
0.91$
Quantity in stock : 27
1N5396

1N5396

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3....
1N5396
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.3x6.4mm ). VRRM: 500V. Cj: 20pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: high Current Capability, Low Forward Voltage Drop. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap, t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
1N5396
Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.3x6.4mm ). VRRM: 500V. Cj: 20pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: high Current Capability, Low Forward Voltage Drop. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap, t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V
Set of 10
1.08$ VAT incl.
(1.00$ excl. VAT)
1.08$

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