Standard and Rectifier Diodes

Forward current (AV): 0.8A. VRRM: 400V. Semiconductor material: silicon

Forward current (AV): 10A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 8.9x8.8mm ). VRRM: 1000V. Cj: 120pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. MRI (max): 100uA. MRI (min): 10uA. Marking on the case: 28.7k Ohms. Equivalents: P1000M, 10A07-TP. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Spec info: IFSM--400Ap t=8.3ms

Forward current (AV): 12A. IFSM: 330A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). VRRM: 100V. Cj: 183pF. Quantity per case: 2. Dielectric structure: common cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Equivalents: VS-12CWQ06FN-M3, VS-12CWQ06FNTR-M3. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 0.85V. Number of terminals: 2. Spec info: Ifsm--2x165A (t=5us), Vf max--0.65V

Forward current (AV): 150A. IFSM: 1600A. Housing (according to data sheet): POWERTAB. VRRM: 200V. Cj: 180pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 45 ns. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.13V. Forward voltage Vf (min): 0.99V. Spec info: IFSM--1600Ap (Tc--25). Function: Ultrafast Soft Recovery Diode

Forward current (AV): 150A. IFSM: 1500A. Housing (according to data sheet): POWERTAB. VRRM: 400V. Cj: 100pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.07V. Spec info: Ifsm 1500Ap (25°C). Function: Ultrafast Soft Recovery Diode

Forward current (AV): 19A. Housing: TO-220. Housing (according to data sheet): TO-220AB. VRRM: 15V. Semiconductor material: Sb. Schottky diode?: schottky. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Note: 700App/5us, 330App/10ms. Note: Vfm 0.36V/19A

VRRM: 100V. Housing: DO41. Average Rectified Current per Diode: 1A. Close voltage (repetitive) Vrrm [V]: 100V. Leakage current on closing Ir [A]: 5uA..50uA. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Switching speed (regeneration time) tr [sec.]: DO-41 ( DO-204AL ). Forward voltage Vf (min): 1.1V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <1.1V / 1A. Mounting Type: THT. Reverse Leakage Current: <50uA / 100V. Reverse Recovery Time (Max): 1500ns. Product series: 1N40

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 200V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: IFSM--30Ap t=8.3mS

Housing: DO-41. Forward current (AV): 1A. IFSM: 30A. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 400V. RoHS: yes. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): DO-41. Semiconductor material: silicon. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: IFSM--30Ap t=8.3mS

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.2X2.7mm ). VRRM: 600V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: Ifms 300Ap t=8.3ms

VRRM: 1000V. Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.2X2.7mm ). Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Spec info: 30Ap/8.3ms

Forward current (AV): 200mA. IFSM: 500mA. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 75V. Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High-speed diodes. Other name: IN4148. MRI (max): 50uA. MRI (min): 25nA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+200°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Spec info: Ifsm--1us 4A, 1ms 1A, 1s 0.5A

Housing: SOD-323. Forward current (AV): 150mA. IFSM: 300mA. Housing (according to data sheet): SOD-323F. VRRM: 100V. RoHS: yes. Cj: 2pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High-speed diodes. Other name: IN4148. MRI (max): 1uA. MRI (min): 25nA. Number of terminals: 2. Dimensions: 1.7x1.25x1 mm. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.715V. Spec info: Ifsm--1us 1A, 1s 0.35A

Forward current (AV): 500mA. IFSM: 1A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 100V. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. MRI (max): 50uA. MRI (min): 25nA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1V

Housing: PCB soldering. Housing: DO-35. Forward current [A]: 0.5A. RoHS: yes. Component family: Small-signal silicon diode. Configuration: PCB through-hole mounting. Number of terminals: 2. Ifsm [A]: 4A. Close voltage (repetitive) Vrrm [V]: 100V. Leakage current on closing Ir [A]: 25nA..50uA. Switching speed (regeneration time) tr [sec.]: 4 ns. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1V @ 10mA

Forward current (AV): 0.3A. IFSM: 4A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 50V. Semiconductor material: silicon. Function: Fast Switching Diodes, Ifsm--1us, 4A. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+200°C

Forward current (AV): 0.2A. IFSM: 2A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 75V. Trr Diode (Min.): 2 ns. Semiconductor material: silicon. Function: ultra-fast switching diode, Ifsm 1us 2A. MRI (max): 50nA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+200°C. Forward voltage Vf (min): 1V

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO41. VRRM: 200V. Cj: 15pF. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching for High Efficiency. MRI (max): 100uA. MRI (min): 5uA. RoHS: yes. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Spec info: 30App/8.3ms

Housing: DO-41. Forward current (AV): 1A. IFSM: 30A. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 600V. RoHS: yes. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: Fast Switching for High Efficiency. MRI (max): 100uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Forward voltage Vf (min): 1.2V. Spec info: IFSM--30Ap t=8.3mS

Forward current (AV): 2A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( DO-204AC ) 6.35x3.0mm. VRRM: 800V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: Silicon Rectifier. MRI (max): uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V

Forward current (AV): 3.3mA. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 100V. Quantity per case: 1. Semiconductor material: silicon. Function: diode. Note: tunnel diode. Number of terminals: 2. Assembly/installation: PCB through-hole mounting

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.3x6.4mm ). VRRM: 300V. Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Number of terminals: 2. Quantity per case: 1. Function: high Current Capability, Low Forward Voltage Drop. Spec info: IFSM--50Ap

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.3x6.4mm ). VRRM: 500V. Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 50uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Number of terminals: 2. Quantity per case: 1. Function: high Current Capability, Low Forward Voltage Drop. Spec info: IFSM--50Ap, t=8.3mS

Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.3x6.4mm ). VRRM: 1000V. Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 50uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Number of terminals: 2. Quantity per case: 1. Function: high Current Capability, Low Forward Voltage Drop. Spec info: IFSM--50Ap, t=8.3mS

Forward current (AV): 3A. IFSM: 200A. Housing: DO-27. Housing (according to data sheet): DO-27 ( 9.2x5.2mm ). VRRM: 200V. Cj: 40pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5us. Semiconductor material: silicon. MRI (max): 500uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Number of terminals: 2. Note: GI. Quantity per case: 1. Spec info: IFSM--200Ap t=8.3ms